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HI-200/883
September 2004 FN6059.1
Dual SPST CMOS Analog Switch
The HI-200/883 is a monolithic device comprising two independently selectable SPST switchers which feature fast switching speeds (240ns typical) combined with low power dissipation (15mW typical @ +25C) Each switch provides low "ON" resistance operation for input signal voltages up to the supply rails and for signal currents up to 25mA continuous. Rugged DI construction eliminates latch-up and substrate SCR failure modes. All devices provide break-before-make switching and are TTL and CMOS compatible for maximum application versatility. HI-200/883 is an ideal component for use in high frequency analog switching. Typical applications include signal path switching, sample and hold circuits, digital filters, and op amp gain switching networks. HI-200/883 is available in a 14 pin Ceramic DIP package and a 10 pin Metal Can (TO-100) package.
Features
* This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * Low "On" Release . . . . . . . . . . . . . . . . . . . . . . .100 Max * Wide Analog Signal Range . . . . . . . . . . . . . . . . . . . .15V * TTL/CMOS Compatible . . . . . . . . . . . . . . 2.4V (Logic "1") * Turn-On Time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns * Analog Current Range (Continuous) . . . . . . . . . . . . 25mA * No Latch-Up * Replaces DG200
Applications
* High Frequency Analog Switching * Sample and Hold Circuits * Digital Filters
Functional Diagram
V+ VREF INPUT SOURCE LOGIC INPUT GATE REFERENCE, LEVEL SHIFTER, AND DRIVER SWITCH CELL GATE
* Op Amp Gain Switching Networks
Pinouts
HI1-200/883 (CERDIP) TOP VIEW
A2 1 NC 2 14 A1 13 NC 12 V+ 11 NC 10 IN1 9 OUT1 8 VREF
DRAIN OUTPUT
GND 3 NC 4 IN2 5 OUT2 6 V- 7
V-
HI2-200/883 (METAL CAN) TOP VIEW
V+ 10 A1 A2 2 1 9 IN1 8 7 4 5 OUT2 6 VOUT1 VREF
GND 3 IN2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2004. All Rights Reserved All other trademarks mentioned are the property of their respective owners.
HI-200/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . .40V VSUPPLY to Ground (V+, V-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Analog Input Voltage, (+VS ) . . . . . . . . . . . . . . . . . . +VSUPPLY +2V Analog Input Voltage, (-VS ) . . . . . . . . . . . . . . . . . . . . -VSUPPLY -2V Digital Input Voltage, (+VA) . . . . . . . . . . . . . . . . . . . +VSUPPLY +4V Digital Input Voltage, (-VA). . . . . . . . . . . . . . . . . . . . . -VSUPPLY -4V Peak Current (S or D) (Pulse at 1ms, 10% Duty Cycle Max). . . . . . . . . . . . . . . . . . 40mA Continuous Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range . . . . . . . . . . . . . . . . . .-65C to +150C Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . . . 275C
Thermal Information
Thermal Resistance JA (oC/W) JC (oC/W) CERDIP Package. . . . . . . . . . . . . . . . . 80 24 Metal Can Package . . . . . . . . . . . . . . . 160 75 Package Power Dissipation at +75oC Ceramic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . 0.76W/oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.62W/oC Package Power Dissipation Derating Factor above +75oC Ceramic DIP Package . . . . . . . . . . . . . . . . . . . . . . . 10.08mW/oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . 8.24mW/oC
Recommended Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage Range (VSUPPLY) . . . . . . . . . . . . . . 15V Analog Input Voltage (VS) . . . . . . . . . . . . . . . . . . . . . . . . VSUPPLY Logic Low Level (VAL) . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 0.8V Logic High Level (VAH) . . . . . . . . . . . . . . . . . . . . 2.4V to +VSUPPLY
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
TABLE 1. D.C. ELECTRICAL PERFORMANCE SPECIFICATIONS Device Tested at: +VSUPPLY = +15V, -VSUPPLY = -15V, VREF = OPEN, GND = 0V, Unless Otherwise Specified. D.C. PARAMETERS Switch "ON" Resistance SYMBOL rDS CONDITIONS VA = 0.8V, VS = 10V, ID = -1mA, All Unused Channels VA = 0.8V VA = 0.8V, VS = -10V, ID = 1mA, All Unused Channels VA = 0.8V Source "OFF" Leakage Current
IS(OFF)
GROUP A SUBGROUPS 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3
TEMPERATURE (oC) 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125
MIN -5 -500 -5 -500 -5 -500 -5 -500 -5 -500 -5 -500 -1.0 -1.0 -1.0 -1.0 -
MAX 70 100 70 100 5 500 5 500 5 500 5 500 5 500 5 500 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.0
UNITS nA nA nA nA nA nA nA nA nA nA nA nA A A A A A A mA mA
VS = +14V, VD = -14V, VA = 2.4V, All Unused Channels VA = 2.4V, VD = +14V, VS = -14V VS = -14V, VD = +14V, VA = 2.4V, All Unused Channels VA = 2.4V, VD = -14V, VS = +14V
Drain "OFF" Leakage Current
ID(OFF)
VD = -14V, VS = +14V, VA = 2.4V, All Unused Channels VA = 2.4V, VD = +14V, VS = -14V VD = +14V, VS = -14V, VA = 2.4V, All Unused Channels VA = 2.4V, VD = -14V, VS = +14V
Channel "ON" Leakage Current
ID(ON)
VD = VS = +14V, VA = 0.8V, All Unused Channels VA = 0.8V, VD = VS = -14V VD = VS = -14V, VA = 0.8V, All Unused Channels VA = 0.8V, VD = VS = +14V
Low Level Input Current High Level Input Current Supply Current
IAL
VAL = 0.8V All Channels VA = 2.4V VAH = 2.4V All Channels VAH = 4.0V All Channels VA = 0V
IAH
+ICC
All Channels VA = 3V
1 2, 3
2
HI-200/883
TABLE 1. D.C. ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued) Device Tested at: +VSUPPLY = +15V, -VSUPPLY = -15V, VREF = OPEN, GND = 0V, Unless Otherwise Specified. D.C. PARAMETERS Supply Current SYMBOL -ICC CONDITIONS All Channels VA = 0V GROUP A SUBGROUPS 1 2, 3 All Channels VA = 3V 1 2, 3 TEMPERATURE (oC) 25 -55 to 125 25 -55 to 125 MIN -2.0 -2.0 -2.0 -2.0 MAX UNITS A A A A
TABLE 2. A.C. ELECTRICAL PERFORMANCE SPECIFICATIONS Device Tested at: +VSUPPLY = +15V, -VSUPPLY = -15V, VREF = OPEN, GND = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 9 10, 11 9 10, 11 TEMPERATURE (oC) 25 55 to 125 25 55 to 125
PARAMETERS Turn "ON" Time
SYMBOL tON
CONDITIONS CL = 35pF, RL = 1k CL = 33pF, RL = 1k
MIN -
MAX 500 800 500 650
UNITS ns ns ns ns
Turn "OFF" Time
tOFF
TABLE 3. ELECTRICAL PERFORMANCE SPECIFICATIONS (NOTE 1) Device Tested at: +VSUPPLY = +15V, -VSUPPLY = -15V, VREF = OPEN, GND = 0V PARAMETERS Address Capacitance Switches Input Capacitance Switch Output Capacitance SYMBOL CA CS (OFF) CD (OFF) CD (ON) Drain to Source Capacitance Off Isolation Cross Talk Charge Transfer Error NOTE: 1. Parameters listed in Table 2 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-in) Final Electrical Test Parameters Group A Test Requirements Groups C & D Endpoints NOTE: 2. PDA applies to Subgroup 1 only. SUBGROUPS (Tables 1 and 2) 1 1 (Note 2), 2, 3, 9, 10, 11 1, 2, 3, 9, 10, 11 1 CDS VISO VCT VCTE CONDITIONS f = 1MHz, VAL = 0V f = 1MHz, VAH = 5V, Measured Source to GND f = 1MHz, VAH = 5V, Measured Output to Ground f = 1MHz, VAL = 0V, Measured Output to Ground f = 1MHz, VAH = 5V f = 200kHz, VA = 2.4, RL = 1K, VGEN = 1VP-P, CL = 10pF f = 200kHz, VA = 2.\4, RL = 1K, VGEN = 1VP-P, CL = 10pF f = 200kHz, VA = 0 to 4V, CL = 0.01F NOTE 1 1 1 1 1 1 1 1 TEMPERATURE (oC) 25 25 25 25 25 25 25 25 MIN 55 60 -10 MAX 20 20 20 30 2.0 10 UNITS pF pF pF pF pF dB dB mV
3
HI-200/883 Test Circuits
+VCC S
+VCC D ID
S VIN IIN
D
VS
VD
VIN
GND
-VCC
GND
-VCC
FIGURE 1. INPUT LEAKAGE CURRENT
FIGURE 2. ID (OFF)
+VCC VS S IS VD VIN
+VCC S D ID(ON)
VIN
V
GND
-VCC
GND
-VCC
FIGURE 3. IS (OFF)
FIGURE 4. ID (ON)
+VCC
I1
S
D
VIN
GND
I2
-VCC
FIGURE 5. SUPPLY CURRENTS
FIGURE 6. CHARGE TRANSFER ERROR
4
HI-200/883 Test Circuits
(Continued)
+VCC
S
D
VIN
VD
GND
-VCC
FIGURE 7. RDS
FIGURE 8. OFF CHANNEL ISOLATION
FIGURE 9. CROSSTALK BETWEEN CHANNELS
5
HI-200/883 Switching Waveforms
FIGURE 10.
FIGURE 11.
FIGURE 12.
6
HI-200/883 Burn-In Circuits
FIGURE 13. HI-200/883 CERAMIC DIP
FIGURE 14. HI-200/883 METAL CAN (TO-99) NOTES:
3. R1 = R2 = 10k 4. C1 = C2 = 0.01F (per socket) or 0.1F (per row) 5. D1 = D2 = IN4002 or equivalent 6. |(V+) - (V-)| = 30V
7
HI-200/883 Schematic Diagrams
TTL/CMOS REFERENCE CIRCUIT VREF CELL
V+ R6 300 QP2 QP1 QP4 QN1 D3 R3 24.2K QN2 R4 5.4K R5 7.9K MN15 VGND MN16 MN17 R7 100K MN14 QP3 QN4 MP13 QP5 TO P2 VREF
R2 5K
VLL
GND
SWITCH CELL
A' N11
V+
N12
INPUT
P11
N13
OUTPUT
V-
P12
A'
8
HI-200/883 Schematic Diagrams
(Continued) DIGITAL INPUT BUFFER AND LEVEL SHIFTER
V+ P3 P1 P4 N11 N12 INPUT N8 N6 P2 VA VN2 N5
P12
P5
V+
N1 P6 TO VLL P7 P8 P9 P10 P11
D1 R1 200 D2 TO VREF
N13
OUTPUT
N9
N10
N7
N4 N3
VV-
Test Circuits and Waveforms
80 70 ON RESISTANCE () VIN = 0V
TA = 25oC, VSUPPLY = 15V, VAH = 2.4V, VAL = 0.8V and VREF = Open
100 V+ = +10V V- = -10V ON RESISTANCE () V+ = +12.5V V- = -12.5V 50 V+ = +15V V- = -15V
60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 TEMPERATURE (oC)
0 -15
-10
-5 0 5 ANALOG SIGNAL LEVEL (V)
10
15
FIGURE 15. ON RESISTANCE vs TEMPERATURE
FIGURE 16. ON RESISTANCE vs ANALOG SIGNAL LEVEL AND POWER SUPPLY VOLTAGE
9
HI-200/883 Test Circuits and Waveforms
100
TA = 25oC, VSUPPLY = 15V, VAH = 2.4V, VAL = 0.8V and VREF = Open (Continued)
90 80 SWITCH CURRENT (mA) IS(OFF) / ID(OFF) 70 60 50 40 30 20 10
CURRENT (nA)
10
ID(ON) 1.0
0.1 25 50 75 100 125 TEMPERATURE (oC)
0 0 1 2 3 4 5 6 7 VOLTAGE ACROSS SWITCH (V)
FIGURE 17. LEAKAGE CURRENT vs TEMPERATURE
FIGURE 18. SWITCH CURRENT vs VOLTAGE
140 120 OFF ISOLATION (dB) 100 80 60 40 20 0 100Hz RL = 1k
1kHz
10kHz FREQUENCY (Hz)
100kHz
1MHz
FIGURE 19. OFF ISOLATION vs FREQUENCY
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 10
HI-200/883 Die Characteristics
DIE DIMENSIONS: 54 mils x 79mils x 19 mils METALLIZATION: Type: Aluminum Thickness: 16kA 2kA GLASSIVATION: Type: Nitride over Silox Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1kA DIE ATTACH: Material: Gold/Silicon Eutectic Alloy Temperature: Ceramic DIP - 460C (Max) Temperature: Metal Can - 420C (Max) WORST CASE CURRENT DENSITY: 2 x 105 A/cm2 at 25mA
Metallization Mask Layout
HI-200
GND A2 A1 V+
2
1
10
9
IN 2
3
8
IN 1
OUT 2
4
5
V-
6
VREF
7
OUT 1
11

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